聚丙烯腈
钝化
卤化物
开路电压
钙钛矿(结构)
磁滞
带隙
晶界
电压
化学
材料科学
光化学
无机化学
化学工程
光电子学
纳米技术
聚合物
结晶学
复合材料
图层(电子)
电气工程
凝聚态物理
工程类
物理
微观结构
作者
Chen Chen,Xiao Wang,Zhipeng Li,Xiaofan Du,Zhipeng Shao,Xiuhong Sun,Dachang Liu,Caiyun Gao,Lianzheng Hao,Qiangqiang Zhao,Bingqian Zhang,Guanglei Cui,Shuping Pang
标识
DOI:10.1002/anie.202113932
摘要
In solution-processed organic-inorganic halide perovskite films, halide-anion related defects including halide vacancies and interstitial defects can easily form at the surfaces and grain boundaries. The uncoordinated lead cations produce defect levels within the band gap, and the excess iodides disturb the interfacial carrier transport. Thus these defects lead to severe nonradiative recombination, hysteresis, and large energy loss in the device. Herein, polyacrylonitrile (PAN) was introduced to passivate the uncoordinated lead cations in the perovskite films. The coordinating ability of cyano group was found to be stronger than that of the normally used carbonyl groups, and the strong coordination could reduce the I/Pb ratio at the film surface. With the PAN perovskite film, the device efficiency improved from 21.58 % to 23.71 % and the open-circuit voltage from 1.12 V to 1.23 V, the ion migration activation energy increased, and operational stability improved.
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