材料科学
单层
拉曼光谱
制作
原子力显微镜
光致发光
光谱学
纳米技术
过渡金属
光电子学
光伏系统
光学
生物
生态学
催化作用
量子力学
病理
替代医学
物理
化学
生物化学
医学
作者
Megan Cowie,Rikke Plougmann,Yacine Benkirane,Léonard Schué,Zeno Schumacher,Peter Grütter
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2021-12-07
卷期号:33 (12): 125706-125706
被引量:12
标识
DOI:10.1088/1361-6528/ac40bd
摘要
Transition metal dichalcogenides (TMDCs) have attracted significant attention for optoelectronic, photovoltaic and photoelectrochemical applications. The properties of TMDCs are highly dependent on the number of stacked atomic layers, which is usually counted post-fabrication, using a combination of optical methods and atomic force microscopy height measurements. Here, we use photoluminescence spectroscopy, Raman spectroscopy, and three different AFM methods to demonstrate significant discrepancies in height measurements of exfoliated MoSe2flakes on SiO2depending on the method used. We also highlight the often overlooked effect that electrostatic forces can be misleading when measuring the height of a MoSe2flake using AFM.
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