TCAD Simulations of High-Aspect-Ratio Nano-biosensor for Label-Free Sensing Application

In this paper, we are presenting simulations of junctionless ion-sensitive field-effect transistor (JL-ISFET) as a pH sensor. Our approach is based on a combination of analytical and numerical methods to reveal the impact of the device geometry and structure on its performance. To have a realistic representation of the fabricated device, further simulations are carried which portray the sensing of surface potential by introducing interface trap charges between the oxide layer and electrolyte. Here, we present our initial steps that belong to a more complex and physically more elaborate simulation framework, which will lead to a better device sensing and fabrication choices of more generic biosensors, in a transition from analytical models to numerical simulations to include effects such as surface roughness and defects in the oxide.