异质结
X射线光电子能谱
价带
光电发射光谱学
半导体
价(化学)
材料科学
导带
半金属
准费米能级
电子能带结构
谱线
原子物理学
光电子学
化学
凝聚态物理
带隙
物理
核磁共振
电子
有机化学
量子力学
天文
作者
Le Wang,Yingge Du,Scott A. Chambers
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2021-06-29
卷期号:39 (4)
被引量:2
摘要
The behavior and functionality of semiconductor heterojunctions depend critically on the alignments of the valence and conduction bands at the various interfaces. Traditionally, band alignment has been measured by x-ray photoelectron spectroscopy using pairs of distinct core levels, one from each side of the interface, to track the valence band maxima in the two materials. Here, we demonstrate that band alignment across an interface can also be determined using a single core-level photoelectron spectrum for an element that is common to both materials. The energy splitting between the photoemission features originating in the two materials is shown to be dominated by the difference in electrostatic potential across the interface, thereby leading to a reliable determination of the band alignment.
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