杰纳斯
半金属
直接和间接带隙
单层
材料科学
光电子学
凝聚态物理
电子结构
半导体
带隙
纳米技术
物理
作者
Qingwen Lan,Changpeng Chen,Tian Qin
出处
期刊:European Physical Journal-applied Physics
日期:2021-04-01
卷期号:94 (1): 10301-10301
标识
DOI:10.1051/epjap/2021210007
摘要
By means of comprehensive first-principles calculations, we studied the geometric structure, the stability and electronic properties of the new two-dimensional (2D) Janus MoXB 2 (X=S, Se) monolayers. Our calculations demonstrated that the predicted Janus MoXB 2 monolayers are all stable semiconductors with direct band gap. In this paper, we focus on impacts upon the electronic and optical properties of the MoXB 2 monolayers under the different biaxial strains. With the compressive stress increases, the MoXB 2 monolayers would become indirect band gap semiconductors, and then behave as semimetal. While under tensile strain, MoXB 2 still maintain direct band gap. In addition, the optical calculation shows that biaxial strain leads to blue shifts in the optical absorption and reflectivity. The result indicates that MoXB 2 may be promised nano candidate materials in optoelectronic devices.
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