Intrinsically stretchable and healable semiconducting polymer for organic transistors

Introducing non-covalent crosslinking moieties to polymer semiconductors produces a stretchable and healable material suitable for wearable electronics. There is great interest and potential in the development of skin-inspired flexible and wearable electronic devices. Such devices require materials that twist, fold and bend with no loss in electronic—or material—properties. Zhenan Bao and colleagues report a conjugated polymer that also incorporates non-covalent interactions between adjacent chains, enabling the material to accommodate up to 100% strain whilst maintaining high charge-carrier mobility. In this proof-of-principle study the authors use the polymers to fabricate flexible and stretchable organic transistors that combine robustness with good electronic properties. Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics1,2. All of the materials and components of such transistors need to be stretchable and mechanically robust3,4. Although there has been recent progress towards stretchable conductors5,6,7,8, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers9,10,11. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods12. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks13,14. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be expected in a wearable device.