From Nonluminescent to Blue‐Emitting Cs4PbBr6 Nanocrystals: Tailoring the Insulator Bandgap of 0D Perovskite through Sn Cation Doping

带隙 材料科学 钙钛矿(结构) 兴奋剂 纳米晶 绝缘体(电) 光电子学 纳米技术 化学工程 工程类
作者
Shenghan Zou,Caiping Liu,Renfu Li,Feilong Jiang,Xueyuan Chen,Yongsheng Liu,Maochun Hong
出处
期刊:Advanced Materials [Wiley]
卷期号:31 (24) 被引量:72
标识
DOI:10.1002/adma.201900606
摘要

Abstract All‐inorganic cesium lead halide perovskite nanocrystals (NCs) with different dimensionalities have recently fascinated the research community due to their extraordinary optoelectronic performance such as tunable bandgaps over the entire visible spectral region. However, compared to well‐developed 3D CsPbX 3 perovskites (X = Cl, Br, and I), the bandgap tuning in 0D Cs 4 PbX 6 perovskite NCs remains an arduous task. Herein, a simple but valid strategy is proposed to tailor the insulator bandgap (≈3.96 eV) of Cs 4 PbBr 6 NCs to the blue spectral region by changing the local coordination environment of isolated [PbBr 6 ] 4− octahedra in the Cs 4 PbBr 6 crystal through Sn cation doping. Benefitting from the unique Pb 2+ ‐poor and Br − ‐rich reaction environment, the Sn cation is successfully introduced into the Cs 4 PbBr 6 NCs, forming coexisting point defects comprising substitutional Sn Pb and interstitial Br i , thereby endowing these theoretically nonluminescent Cs 4 PbBr 6 NCs with an ultranarrow blue emission at ≈437 nm (full width at half maximum, ≈12 nm). By combining the experimental results with first‐principles calculations, an unusual electronic dual‐bandgap structure, comprising the newly emerged semiconducting bandgap of ≈2.87 eV and original insulator bandgap of ≈3.96 eV, is found to be the underlying fundamental reason for the ultranarrow blue emission.
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