Fast synthesis of thin graphite film with high-performance thermal and electrical properties grown by plasma CVD using polycrystalline nickel foil at low temperature

We have developed a high speed, low temperature synthesis method of thin graphite film by plasma-enhanced chemical vapor deposition (plasma CVD). The synthesis time was less than 60 min and the highest process temperature was 1300 °C. Raman spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy (TEM) show a high crystallinity of synthesized graphite film. The graphitization of the film was larger than 0.944, which suggests that the film was nearly completely graphitized. The thermal conductivity of the film was 1570 W/mK which is the highest among of graphite synthesized by CVD on transition metal substrates.