Development of advanced hydrogenation processes for silicon solar cells via an improved understanding of the behaviour of hydrogen in silicon

Abstract The understanding and development of advanced hydrogenation processes for silicon solar cells are presented. Hydrogen passivation is incorporated into virtually all silicon solar cells, yet the properties of hydrogen in silicon are still poorly understood. This is largely due to the complex behaviour of hydrogen in silicon and its ability to exist in many different forms in the lattice. For commercial solar cells, hydrogen is introduced into the device through the deposition of hydrogen‐containing dielectric layers and the subsequent metallisation firing process. This process can readily passivate structural defects such as grain boundaries but is ineffective at passivating numerous defects in silicon solar cells such as the boron‐oxygen complex, responsible for light‐induced degradation in p‐type Czochralski silicon. This difficulty is due to the need to first form the boron‐oxygen defect and also due to atomic hydrogen naturally occupying low‐mobility and low‐reactivity charge states. However, these challenges can be overcome using advanced hydrogenation processes incorporating excess carrier generation from illumination or current injection that increase the concentration of the highly mobile and reactive neutral charge state. As a result, after fast firing, additional low‐temperature advanced hydrogenation processes incorporating illumination can be implemented to enable the passivation of difficult defects like the boron‐oxygen complex. With the implementation of such processes for industrial silicon solar cells, efficiency improvements of 1.1% absolute can be obtained.