材料科学
光电探测器
响应度
光电子学
薄膜
热辐射计
红外线的
无定形固体
比探测率
半导体
光学
探测器
纳米技术
物理
有机化学
化学
作者
Rui Zhang,Yang Zhang,Liwen Liu,Jie Leng,Shaofeng Wen,You Meng,Yi Yin,Changyong Lan,Chun Li,Yong Liu,Johnny C. Ho
标识
DOI:10.1002/adom.202301055
摘要
Abstract PdSe 2 , a semiconductor with a narrow band gap, shows tremendous promise for high‐performance broadband photodetectors. In this study, highly sensitive, broadband, and flexible PdSe 2 thin film photodetectors on polyimide (PI) substrates that can detect light from the UV (365 nm) to infrared (2200 nm) regions are reported. The devices with thick (21 nm) PdSe 2 films show decent performance with a decent responsivity of 37.6 mA W −1 at 1550 nm and a fast response time. For the thick PdSe 2 film, the bolometric effect dominates the positive photoresponse across all wavelength regions, whereas for the thin PdSe 2 film (4.5–13 nm), which shows both positive and negative photoresponses, it dominates in the infrared region. The negative photoresponse of thin PdSe 2 in the UV to the VIS region is attributed to the charge transfer‐related adsorption‐desorption of gas molecules. Detailed investigations revealed that the temperature coefficient of resistance (TCR) value is closely correlated to film thickness, with the thinnest film exhibiting the highest absolute TCR value of up to 4.3% °C −1 . The value is much larger than that of metals, most 2D materials, amorphous Si, and even commercial VO x . These findings suggest that PdSe 2 films have a promising future in broadband photodetectors.
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