Oxidized Silicon Terminated Diamond p-MOSFETs with Channel Mobility >150 cm2V-1s-1 and |VTH|> 3V Normally-off for Complementary Power Circuits

Oxidized silicon terminated (C-Si-O) diamond surface has been applied for lateral and vertical MOSFETs. C-Si-O bonds instead of C-O-Si bonds are key to fabricate higher channel mobility of diamond p channel MOSFETs (p-MOSFETs). The hole channel mobility exceeds 150 cm ² V ^-1 s ^-1 which is higher than the electron mobility of SiC n-MOSFETs. The threshold voltage V TH of diamond p-MOSFET is negatively large enough (V TH < -3V) for normally-off operation at high voltage circuits. Maximum drain current densities I D,Max were >300 mAmm ^-1 in lateral FETs and >200 mAmm ^-1 in vertical FETs. They are the highest in normally-off operation of diamond p-FETs.