正铁氧体
铁电性
材料科学
薄膜
脉冲激光沉积
压电响应力显微镜
极化(电化学)
凝聚态物理
核磁共振
光电子学
电介质
纳米技术
磁化
磁场
化学
物理
物理化学
量子力学
作者
Eunsoo Cho,Konstantin Klyukin,Tingyu Su,Allison Kaczmarek,Caroline A. Ross
标识
DOI:10.1002/aelm.202300059
摘要
Abstract This work characterizes the structural, magnetic, and ferroelectric properties of epitaxial LuFeO 3 orthoferrite thin films with different Lu/Fe ratios. LuFeO 3 thin films are grown by pulsed laser deposition on SrTiO 3 substrates with Lu/Fe ratio ranging from 0.6 to 1.5. LuFeO 3 is antiferromagnetic with a weak canted moment perpendicular to the film plane. Piezoresponse force microscopy imaging and switching spectroscopy reveal room temperature ferroelectricity in Lu‐rich and Fe‐rich films, whereas the stoichiometric film shows little polarization. Ferroelectricity in Lu‐rich films is present for a range of deposition conditions and crystallographic orientations. Positive‐up‐negative‐down ferroelectric measurements on a Lu‐rich film yield ≈13 µC cm −2 of switchable polarization, although the film also shows electrical leakage. The ferroelectric response is attributed to antisite defects analogous to that of Y‐rich YFeO 3 , yielding multiferroicity via defect engineering in a rare earth orthoferrite.
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