光电探测器
光电导性
光电流
响应度
光电子学
材料科学
带隙
纳米线
暗电流
半导体
光学
物理
作者
Wei Ruan,Xianquan Meng
出处
期刊:ACS applied nano materials
[American Chemical Society]
日期:2023-01-09
卷期号:6 (2): 1019-1026
被引量:4
标识
DOI:10.1021/acsanm.2c04410
摘要
Ga2O3 nanowires on silicon substrates were synthesized by the chemical vapor deposition method, and the Ga2O3-based metal–semiconductor–metal structured solar-blind photodetector was constructed successfully. Anomalously, the as-constructed photodetector exhibits negative photoconductivity under the illumination from 365 to 645 nm (sub-bandgap excitation) while it shows positive photoconductivity at the 254 nm illumination (super-bandgap excitation), which indicates that the photodetector has a wide spectral response extending to visible light. Under 365 nm illumination, the ratio of dark current to photocurrent, responsivity, and detectivity of the photodetector reach 5570, 0.2 A/W, and 2.52 × 1011 jones, respectively. A possible mechanism is proposed to explain the rare negative photoconductivity phenomenon. Herein, because the negative photoconductivity occurs in sub-bandgap excitations, the photodetector can detect photons whose energy is less than the bandgap of the sample, widening the spectral response. This work provides a method for wide spectrum photodetectors and other negative photoconductivity devices.
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