钝化
钙钛矿(结构)
材料科学
图层(电子)
降级(电信)
多孔性
化学工程
载流子寿命
光电子学
纳米技术
复合材料
电子工程
硅
工程类
作者
Jiashun Li,Jing Liao,Tianhe Dong,Hongyu Li,Ze Li,Li Tan,Xu Chen,Wenfeng Zhang,Haijin Li
出处
期刊:ACS materials letters
[American Chemical Society]
日期:2024-12-23
卷期号:: 350-358
标识
DOI:10.1021/acsmaterialslett.4c02099
摘要
Perovskite solar cells have attracted extensive attention due to their simple manufacturing process and high efficiency. However, defects between the perovskite and hole transport layer can lead to nonradiative recombination of photogenerated carriers and severe ion migration, which accelerates the degradation of such devices. Here, we chose to deposit an Al2O3 porous insulating layer on the surface of the perovskite film. At the same time, we chose to introduce NMABr (1-Naphthylmethylamine Bromide) into Al2O3 as a modifier to overcome the issue that applying Al2O3 alone may hinder interfacial carrier transport due to the uncontrolled morphology. The addition of NMABr not only has a passivation effect but also changes the morphology of the Al2O3 layer. Under the synergistic effect of Al2O3 and NMABr, a porous insulating contact layer is better formed, which is conducive to carrier transport and improves the stability and efficiency.
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