Demonstration of the normally off β -Ga2O3 MOSFET with high threshold voltage and high current density

In this work, we demonstrated the enhancement mode (E-mode) β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) structure. This E-mode Ga2O3 MOSFET featured the highest VTH of 9.03 V and the highest maximum current ID of 70.0 mA/mm among the reported lateral normally off β-Ga2O3 MOSFETs. Meanwhile, a breakdown voltage of 834 V, a specific on-resistance RON,sp of 19.3 mΩ·cm2, and a sub-threshold swing SS of 87 mV/dec were achieved simultaneously. In addition, VTH shifted by only 9.9% after applying a gate stress of 25 V for 105 s. These findings provide a promising path for the development of enhancement-mode Ga2O3 power devices by incorporating a charge-storage structure.