Ion Migration in Metal Halide Perovskite Field-Effect Transistors

Metal halide perovskites (MHPs) have made incredible progress in the field of optoelectronic devices such as light-emitting diodes, solar cells, photodetectors, and transistors. Therein, ion migration widely exists in perovskite-based optoelectronic devices and may affect device performance and working stability. Many studies have demonstrated that the generation and migration of ion defects in MHPs have been considered as the main reason for the poor performance of perovskite field-effect transistors (PeFETs), related to complex physicochemical, electronic, and photoelectric properties. However, the origin and characterization methods of ion migration-related mechanisms in PeFETs are still unclear to date. In this review, theoretical and experimental ion migration-related issues in PeFETs are systematically discussed. We begin with a brief description of ion migration in perovskite, including the origin and channels of ion migration, the description of ion migration, and the visualized characterization methods of ion migration. Sequentially, the influence of ion migration on device performance of PeFETs is analyzed in detail. Finally, we provide an outlook on the current challenges and future opportunities in this emerging field.