心烦意乱
单事件翻转
可靠性(半导体)
节点(物理)
计算机科学
可靠性工程
事件(粒子物理)
弹性(材料科学)
空格(标点符号)
静态随机存取存储器
工程类
物理
计算机硬件
操作系统
机械工程
天体物理学
量子力学
结构工程
热力学
功率(物理)
作者
Pavan Kumar Mukku,Rohit Lorenzo
摘要
Summary Over the past four decades, single event upset (SEU) and single event multiple node upset (SEMNU) have become the major issues in the memory area. Moreover, these upsets are prone to reliability issues in space, terrestrial, military, and medical applications. This article concisely reviews different researchers and academicians who proposed resilience techniques and methods to mitigate this upset mess. In addition, we also investigated the importance of and the impact of on device scaling parameters in upset mechanism, probability of memory failure, and the figure of metrics for the stability of memory cells.
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