量子点
纳米晶
红外线的
胶体
材料科学
光电子学
纳米技术
二进制数
光学
化学
物理
物理化学
算术
数学
作者
Binbin Wang,Mohan Yuan,Haibo Liu,Xingchen Zhang,Haibo Liu,Jing Wang,Liang Gao,Jianbing Zhang,Jiang Tang,Xinzheng Lan
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-07-23
标识
DOI:10.1021/acs.nanolett.4c02235
摘要
Thanks to their tunable infrared absorption, solution processability, and low fabrication costs, HgTe colloidal quantum dots (CQDs) are promising for optoelectronic devices. Despite advancements in device design, their potential for imaging applications remains underexplored. For integration with Si-based readout integrated circuits (ROICs), top illumination is necessary for simultaneous light absorption and signal acquisition. However, most high-performing traditional HgTe CQD photodiodes are
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