蚀刻(微加工)
过程(计算)
制造工艺
材料科学
工艺工程
制造工程
计算机科学
纳米技术
工程类
操作系统
复合材料
图层(电子)
作者
Zhaoying Xi,Zeng Liu,Junpeng Fang,Ang Bian,Shaohui Zhang,Jia‐Han Zhang,Lei Li,Yufeng Guo,Weihua Tang
标识
DOI:10.1088/1361-6463/ad773d
摘要
Abstract Etching plays a key role in processing and manufacturing electronic and optoelectronic devices. For ultra-wide bandgap semiconductor gallium oxide (Ga 2 O 3 ), its etching investigations and evolution mechanism are still at the earlier stage, and some more research gumption should be invested. In this review, we make a summary on the etching of Ga 2 O 3 , including dry (plasma) etching, wet chemical etching, and photoelectrochemical etching, and discuss the etching results, existing problems, and feasible solutions, in order to provide guidance and advises for furtherly developing the Ga 2 O 3 etching and Ga 2 O 3 -based electronic and optoelectronic devices.
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