Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region

Charge coupled drift region are commonly used to obtain smaller specific on-resistance for majority carrier device. However, as the field distribution of edge terminations is concerned, charge coupled structure is well suited for power devices with low blocking voltage in the range of 30-200V. In this paper, three kinds of multi-trench termination are designed and simulated for 1200V SiC devices with charge coupled drift region. The results show that "the termination of deep trench coupled field plate (FP) with field limiting ring (FLR)" and "the termination of deep trench coupled field plate (FP) with field limiting ring (FLR) and floating island" can both meet the requirement of blocking voltage greater than 1200V, and the maximum efficiency of the termination can reach 87.8 %.