浅沟隔离
薄脆饼
材料科学
蚀刻(微加工)
硅
制作
GSM演进的增强数据速率
沟槽
产量(工程)
光电子学
接触角
过程(计算)
芯(光纤)
光学
复合材料
图层(电子)
计算机科学
物理
操作系统
医学
电信
替代医学
病理
作者
Dong Li,Guang Yang,Zhicheng Song,Jing Wang,Zhongwei Jiang,Jinrong Zhao
标识
DOI:10.1109/cstic61820.2024.10531979
摘要
In shallow trench isolation (STI) process, side-wall angle is an important parameter to achieve high quality isolation silicon oxide filling. Here, HBr, and O2 are utilized as the main etch gases to etch silicon in STI by inductively coupled plasma etcher, with a much side-wall angle center/edge difference. To deal with the situation, two methods are studied: adding dilute gas, and optimizing electrical static chuck temperature. Both of them are effective to improve side-wall angle uniformity, which enhances the yield of STI process in wafer fabrication.
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