III-V technology developments addressing a high operating temperature at LYNRED
计算机科学
材料科学
作者
Nicolas Péré‐Laperne,Alexandre Brunner,Gulnar Dagher,Anaïs Saintoyant,N. Morisset,Laurent Rubaldo,Jérôme Coussement,A. Evirgen,Jean‐Luc Reverchon,B. Simozrag,Michel García,Bruno P. Gérard,C. Cervera,O. Gravrand
标识
DOI:10.1117/12.3014159
摘要
Lynred is leading the development of infrared detectors for high performances applications. Two trends are identified in the infrared range, the increase of the operating temperature and the pixel pitch reduction. For 15 years, the III-V technologies present an increasing interest to address both challenges. At LYNRED, these technologies allow to address Short Wave InfraRed (SWIR) and Mid-Wave InfraRed (MWIR) for ground applications. Many challenges have to be addressed for the future focal plane arrays (FPAs). Electrical and optical crosstalks as well as image quality and stability, are one of the prime concern for detectors with pixel pitch down to 7.5μm. In order to reach an industrial production level of infrared FPAs, technological developments are required at each steps: the epitaxy, the detector array process, flip chip and back end processing. Another key element is the Read Out Integrated Circuit (ROIC) designed in-house to fulfil our customer needs.
We review the latest developments at LYNRED on III-V technologies, in terms of operability, residual fixed pattern noise (RFPN) and Modulation Transfer Function (MTF) optimizations.