纳米片
光催化
异质结
材料科学
制氢
硅
氢
纳米技术
化学工程
光电子学
催化作用
化学
工程类
有机化学
作者
Rui Cai,Yan Wang,Jiarui Wang,Jianfang Zhang,Cuiping Yu,Jiewu Cui,Yong Zhang,Chandra Sekhar Tiwary,Yucheng Wu
出处
期刊:ACS applied nano materials
[American Chemical Society]
日期:2024-05-06
卷期号:7 (10): 11136-11145
标识
DOI:10.1021/acsanm.4c00315
摘要
Two-dimensional silicon (Si) nanosheets are becoming increasingly exciting for photocatalytic applications. Their unique morphology and physiochemical properties make it attractive in heterojunction engineering. In this work, we report the construction of 2D H–Si/g-C3N4 hybrid as a heterojunction photocatalyst for solar photocatalytic hydrogen evolution. The exfoliated silicon nanosheets etched by hydrofluoric acid exhibit a hydrogen-terminated surface with an inverse charging state, which can thus be easily anchored onto g-C3N4 nanosheets by self-assembly. The optimized H–Si/g-C3N4 heterojunction photocatalyst with Pt as the cocatalyst achieved an improved photocatalytic hydrogen production rate which is about 2 times that of g-C3N4 nanosheets under simulated sunlight irradiation using methanol as the sacrificial agent. Density functional theory calculations revealed that the built-in electric field (BIEF) at the H–Si/g-C3N4 interface contributes to the spatial charge separation of the heterojunction. The BIEF leads to an S-scheme carrier transfer mechanism at the H–Si/g-C3N4 interface that benefits the carrier separation on g-C3N4 nanosheets, resulting in uniform deposition of the Pt cocatalyst at the heterojunction interface and improved photocatalytic performance. This work not only expands the application of silicon nanosheets by supporting the potential of 2D H–Si/g-C3N4 heterojunction in photocatalytic reactions but also provides valuable insights to the interface behavior of the H–Si/g-C3N4 heterostructure.
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