光致发光
外延
正电子湮没谱学
材料科学
晶体缺陷
基质(水族馆)
光谱学
空位缺陷
消灭
散射
分子物理学
正电子湮没
正电子
凝聚态物理
光电子学
分析化学(期刊)
结晶学
化学
纳米技术
光学
物理
地质学
电子
海洋学
量子力学
色谱法
图层(电子)
作者
Takashi Koida,Shigefusa F. Chichibu,Akira Uedono,Atsushi Tsukazaki,M. Kawasaki,T. Sota,Yasutomo Segawa,Hideomi Koinuma
摘要
Influences of point defects on the nonradiative processes in ZnO were studied using steady-state and time-resolved photoluminescence (PL) spectroscopy making a connection with the results of positron annihilation measurement. Free excitonic PL intensity naturally increased with the increase in the nonradiative PL lifetime (τnr). Density or size of Zn vacancies (VZn) decreased and τnr increased with increasing growth temperature in heteroepitaxial films grown on a ScAlMgO4 substrate. Use of homoepitaxial substrate further decreased the VZn density. However, τnr was the shortest for the homoepitaxial film; i.e., no clear dependence was found between τnr and density / size of VZn or positron scattering centers. The results indicated that nonradiative recombination processes are not solely governed by single point defects, but by certain defect species introduced by the presence of VZn such as vacancy complexes.
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