锡
X射线光电子能谱
氮化钛
化学气相沉积
材料科学
钨
成核
分析化学(期刊)
氮化物
图层(电子)
化学
冶金
化学工程
纳米技术
有机化学
工程类
作者
Sunil Kumar,D. Chopra,G. C. Moore Smith
标识
DOI:10.1016/0368-2048(93)80045-n
摘要
X-ray photoelectron spectroscopy (XPS) has been used to study the characteristics of titanium nitride (TiN) as a nucleation layer for the deposition of low pressure chemical vapor deposited tungsten (LPCVD-W) onto SiO2. The XPS depth profiles and the chemical analysis of the as-deposited W/TiN/Si (with sputtered TiN) and W/TiN/SiO2/Si (with LPCVD-TiN) structures suggest that the chemical interaction of TiN with W and with Si/SiO2 substrates tends to be minimal.
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