材料科学
薄膜晶体管
晶体管
表面能
半导体
有机半导体
光电子学
电介质
场效应晶体管
曲面(拓扑)
纳米技术
复合材料
电压
电气工程
图层(电子)
几何学
数学
工程类
作者
Xiangnan Sun,Yunqi Liu,Chong‐an Di,Yugeng Wen,Yunlong Guo,Lei Zhang,Yan Zhao,Gui Yu
标识
DOI:10.1002/adma.201190017
摘要
The growth mode and morphology of semiconductors show changes with varying surface energy heterogeneity of dielectrics in thin-film transistors (TFTs). In previous interfacial investigations of TFTs, the surface energy heterogeneity has always been neglected. However, in work reported by Yunqi Liu and co-workers on p. 1009, it is found that the surface energy heterogeneity of dielectrics has a high impact on the morphology of the semiconductor as well as the performance of the transistor.
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