Impact of Body Doping and Thickness on the Performance of Germanium-Source TFETs

The impact of body doping and thickness on the performance of a germanium-source tunnel field-effect transistor in which band-to-band tunneling occurs entirely within the source region is investigated via 2-D device simulations calibrated to experimental data. It is found that the dominant leakage mechanism varies depending on the body design parameter values. A moderately doped (10 ¹⁸ cm ^-3 ) body that is not fully depleted provides for the best transistor performance.