渗氮
材料科学
电介质
氮化硅
陶瓷
氮化物
多孔性
多孔硅
硅
转化(遗传学)
介电损耗
相(物质)
复合材料
图层(电子)
冶金
光电子学
化学
有机化学
基因
生物化学
作者
Jie Xu,Junbo Wang,Wei Cui,Xiao Lei Su,Wan Cheng Zhou
出处
期刊:Advanced Materials Research
日期:2011-02-21
卷期号:194-196: 2225-2228
被引量:1
标识
DOI:10.4028/www.scientific.net/amr.194-196.2225
摘要
Porous reaction-bonded silicon nitride ceramics with different values of α/β ratio were obtained by setting the nitriding temperature and time. The influence of α/β phase transformation on the dielectric properties of porous silicon nitride ceramics has been investigated. The results show that the α/β transformation occurs when the nitriding temperature is higher than 1400°C . The values of α/β ratio decrease with increase of nitriding temperature and time. The dielectric constant ε′ and the dielectric loss tan δ of the samples increase because of the α/β transformation, and the change of the dielectric loss is more obvious. The increase of concentrations of point defects due to the α/β transformation leads to the significant increase of the dielectric loss.
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