Tunneling Through III–V Low-Barrier Heterostructures
作者
P. Guéret,A. Baratoff,S. J. Bending,H. P. Meier,E. Marclay,M.A. Py
出处
期刊:Springer series in electrophysics日期:1986-01-01卷期号:: 24-27被引量:1
标识
DOI:10.1007/978-3-642-82979-6_4
摘要
This paper deals with tunnelling through very low and thick Al x Ga 1−x As barriers. E xperimental results are presented and compared with theory. Measurements in a transverse magnetic field are also described, and their relationship to the tunnelling time discussed. They provide further confirmation of direct, “ballistic” tunnelling through thick barriers.