期刊:IEEE Sensors Journal [Institute of Electrical and Electronics Engineers] 日期:2016-10-01卷期号:16 (19): 7227-7233被引量:15
标识
DOI:10.1109/jsen.2016.2599181
摘要
This paper describes a new wide dynamic range readout circuit incorporating a pixel-level time-to-digital analog-to-digital converter for a short-wavelength infrared InGaAs focal plane array. To extend the dynamic range, the self-controlled integration capacitance technique and the detector current adaptive integration time technique are adopted in the readout circuit, which is operated individually in each pixel. Each pixel can have an appropriate gain independently depending on the signal current without any help from a digital processor. The readout circuit was fabricated using a 0.35-μm standard CMOS process. The measured results of the fabricated chip show that the dynamic range exceeds 140 dB and that the noise level is 73.35 e-rms.