Double side sintered IGBT 650V/ 200A in a TO-247 package for extreme performance and reliability

The objective of this work is to evaluate thermal and electrical performance improvements from silver sintering compared to traditional solder attachment in an IGBT + diode / 650V rated TO-247 package. The devices under test (D.U.T) will be stressed by continually adjusting current to maintain the same delta T _j °C. After initial electrical and thermal characterization of the samples, the D.UTs were subjected to thermal and power cycling stress qualification profiles consisting of 200A 15s on, 15s off with delta Tj of 100°C and delta Tj of 85°C for the sintered parts, and 130A 15s on, 15s off with delta T _j of 85°C for the soldered parts. Thermal impedance was measured during power cycling/pulsing tests and metallographic analysis were used to evaluate potential defects on the die attach interfaces. Vce (sat) was also be measured and analysis of the impact on the devices' junction temperature and consequently on the attachment reliability will be performed.