四方晶系
电子能带结构
材料科学
光致发光
晶体结构
能量(信号处理)
谱线
有效质量(弹簧-质量系统)
结晶学
物理
凝聚态物理
化学
光电子学
量子力学
作者
Andrew Shabaev,Michael J. Mehl,Al. L. Éfros
标识
DOI:10.1103/physrevb.92.035431
摘要
Using first principles calculations we describe the energy band structure of bulk ${\mathrm{CuInS}}_{2}$. The energy band parameters for the multiband effective mass approximation that describes the band edges of this semiconductor are obtained by fitting them to the first principles spectra. Within the multiband effective mass approximation we develop a theoretical description for the structure of band-edge levels and optical properties of the ${\mathrm{CuInS}}_{2}$ nanocrystals. For the nanocrystals of spherical shape, the optical transitions are weakly allowed between the electron and hole ground states due to the tetragonal symmetry of the crystal lattice, resulting in a large Stokes shift of photoluminescence up to 300 meV in the smallest nanocrystals. This theory of the band-edge optical transitions in ${\mathrm{CuInS}}_{2}$ NCs can be applied to spherical NCs made of other chalcopyrite compounds.
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