材料科学
阴极发光
泄漏(经济)
透射电子显微镜
二极管
反向漏电流
光电子学
位错
斑点
结晶学
复合材料
纳米技术
化学
肖特基二极管
发光
经济
宏观经济学
物理化学
作者
Shigeyoshi Usami,Yuto Ando,Atsushi Tanaka,Kentaro Nagamatsu,Manato Deki,Maki Kushimoto,Shugo Nitta,Yoshio Honda,Hiroshi Amano,Yoshihiro Sugawara,Yongzhao Yao,Yukari Ishikawa
摘要
Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that 1c pure screw dislocations are related to the reverse leakage in vertical p-n diodes.
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