散热片
钻石
微通道
热撒布器
材料科学
多物理
热阻
热点(地质)
热管
光电子学
热的
核工程
复合材料
机械工程
机械
传热
纳米技术
热力学
有限元法
工程类
物理
地球物理学
作者
Yong Han,Boon Long Lau,Xiaowu Zhang,Yoke Choy Leong,Kok Fah Choo
出处
期刊:IEEE Transactions on Components, Packaging and Manufacturing Technology
[Institute of Electrical and Electronics Engineers]
日期:2014-04-16
卷期号:4 (6): 983-990
被引量:43
标识
DOI:10.1109/tcpmt.2014.2315234
摘要
The diamond heat spreader has been directly attached between the test chip and the Cu microchannel heat sink for thermal performance enhancement of the GaN-on-Si device. In the fabricated test vehicle, the small heater is used to represent one unit of transistor. Experimental tests have been conducted on the fabricated test vehicle to investigate the performance. Two types of simulation models have been constructed in COMSOL, considering the multiphysics features and temperature-dependent material properties. The submodel in conjunction with the main model is constructed to predict the thermal performance of the GaN-on-Si structure. The heating power, which is concentrated on eight tiny heaters of size 350 × 150 μm 2 , is varied from 10 to 50 W. With the diamond heat spreader attached to the liquidcooled microchannel heat sink, the maximum heater temperature can be reduced by 11.5%-22.9%, while the maximum gate temperature can be reduced by 8.9%-18.5%. Consistent results from the experimental and simulation studies have verified the enhancement of the hotspot cooling capability using directly attached diamond heat spreader.
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