Arrhenius Characterization of ILD and Copper CMP Processes

To date, chemical mechanical planarization (CMP) models have relied heavily on parameters such as pressure, velocity, slurry, and pad properties to describe material removal rates. One key parameter, temperature, which can impact both the mechanical and chemical facets of the CMP process, is often neglected. Using a modified definition of the generalized Preston's equation with the inclusion of an Arrhenius relationship, thermally controlled polishing experiments are shown to quantify the contribution of temperature to the relative magnitude of the thermally dependent and thermally independent aspects of copper and interlayer dielectric (ILD) CMP. The newly defined Preston's equation includes a modified definition of the activation energy parameter contained in the Arrhenius portion, the combined activation energy, which describes all events (chemical or mechanical) that are impacted by temperature during CMP. Studies indicate that for every consumable set combination (i.e., slurry and polishing pad) a characteristic combined Arrhenius activation energy can be calculated for each substrate material being polished. © 2004 The Electrochemical Society. All rights reserved.