期刊:IEEE Transactions on Nuclear Science [Institute of Electrical and Electronics Engineers] 日期:1988-02-01卷期号:35 (1): 105-109被引量:382
标识
DOI:10.1109/23.12684
摘要
The light yield in photons per magaelectronvolt of some common inorganic scintillating crystals has been measured with silicon photodiodes. Incident particles are gammas in the 1-MeV region. The light signal was calibrated against 60-keV gammas converted directly in the photodiode depletion layer. Among the tested materials CsI(Tl) gave the highest light yield of 52000 photons/MeV deposited energy.< >