硅烯
日耳曼
带隙
电场
凝聚态物理
材料科学
从头算
宽禁带半导体
光电子学
硅
物理
量子力学
作者
Zeyuan Ni,Qihang Liu,Kechao Tang,Jiaxin Zheng,Jing Zhou,Rui Qin,Zhengxiang Gao,Dapeng Yu,Jing Lü
出处
期刊:Nano Letters
[American Chemical Society]
日期:2011-12-21
卷期号:12 (1): 113-118
被引量:1270
摘要
By using ab initio calculations, we predict that a vertical electric field is able to open a band gap in semimetallic single-layer buckled silicene and germanene. The sizes of the band gap in both silicene and germanene increase linearly with the electric field strength. Ab initio quantum transport simulation of a dual-gated silicene field effect transistor confirms that the vertical electric field opens a transport gap, and a significant switching effect by an applied gate voltage is also observed. Therefore, biased single-layer silicene and germanene can work effectively at room temperature as field effect transistors.
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