钻石
薄脆饼
材料科学
光电子学
热阻
界面热阻
制作
宽禁带半导体
晶体管
热的
热导率
电介质
复合材料
电气工程
电压
医学
物理
替代医学
病理
气象学
工程类
作者
James W. Pomeroy,Roland B. Simon,Huarui Sun,Daniel Francis,Firooz Faili,Daniel J. Twitchen,Martin Kuball
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2014-09-17
卷期号:35 (10): 1007-1009
被引量:45
标识
DOI:10.1109/led.2014.2350075
摘要
Low thermal resistance GaN-on-diamond wafers offer enhanced thermal management with respect to GaN-on-SiC devices. The GaN/diamond interfacial thermal resistance can contribute significantly to the total device thermal resistance and must therefore be minimized to gain the maximum benefit from GaN-on-diamond. A contactless thermoreflectance measurement technique has been developed, which can be used after wafer growth and before device fabrication, enabling rapid feedback about the influence of growth parameters on interfacial thermal resistance. A measured 2× reduction in the GaN/diamond interfacial resistance is achieved by reducing the dielectric thickness between the GaN and diamond from 90 to 50 nm, enabling a potential 25% increase in transistor power dissipation for GaN-on-diamond.
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