Assessments of SOI technologies for hardening

Silicon-on-insulator technologies are of particular interest in terms of radiation hardening. First, the radiation effects basic phenomena will be emphasized, in relation with the device structures relevant to the SOI. As an introduction, prospective results of a SIMOX technology prototype are presented. These results can be compared with those from the literature, based on SIMOX or other structures. Advantages and weaknesses of these structures are discussed.