光探测
光电探测器
光电子学
响应度
石墨烯
材料科学
CMOS芯片
光子学
光电二极管
光通信
硅光子学
半导体
纳米技术
作者
Andreas Pospischil,Markus Humer,Marco M. Furchi,Dominic Bachmann,R. Guider,T. Fromherz,Thomas Mueller
出处
期刊:Nature Photonics
[Springer Nature]
日期:2013-09-15
卷期号:7 (11): 892-896
被引量:803
标识
DOI:10.1038/nphoton.2013.240
摘要
Optical interconnects are becoming attractive alternatives to electrical wiring in intra- and inter-chip communication links. Particularly, the integration with silicon complementary metal-oxide-semiconductor (CMOS) technology has received considerable interest due to the ability of cost-effective integration of electronics and optics on a single chip. While silicon enables the realization of optical waveguides and passive components, the integration of another, optically absorbing, material is required for photodetection. Germanium or compound semiconductors are traditionally used for this purpose; their integration with silicon technology, however, faces major challenges. Recently, graphene has emerged as a viable alternative for optoelectronic applications, including photodetection. Here, we demonstrate an ultra-wideband CMOS-compatible photodetector based on graphene. We achieve multi-gigahertz operation over all fiber-optic telecommunication bands, beyond the wavelength range of strained germanium photodetectors, whose responsivity is limited by their bandgap. Our work complements the recent demonstration of a CMOS-integrated graphene electro-optical modulator, paving the way for carbon-based optical interconnects.
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