High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence

AlGaAs-based large optical cavity (LOC) laser diodes (LDs) emitting at 808 nm using a tensile-strained GaAsP quantum-well (QW) were developed. LDs with 1-/spl mu/m-LOC and 2 /spl mu/m-LOC structure show a very high continuous wave (CW) output power (8.9 W), a good wall-plug efficiency (50%) and a low degradation rate (10/sup -5/ h/sup -1/). The power-current characteristics of broad area LDs with the 1-/spl mu/m-LOC structure having a higher aluminum content in the waveguide layer exhibit a higher temperature stability. The 2-/spl mu/m-LOC diode lasers with a lower aluminum content and thinner cladding layers has a slightly smaller vertical far-field divergence and a smaller series resistance. The 2-/spl mu/m-LOC structure was used in laser bars. They have a filling factor of 28% and exhibit a maximum output power of 148 W with a good beam quality of 7.8/spl deg/ x 39/spl deg/ (full-width l/e/sup 2/-power) at 70 W.