记忆电阻器
神经形态工程学
人工神经元
人工神经网络
计算机科学
电子工程
拓扑(电路)
作者
Yu Wang,Xintong Chen,Daqi Shen,Miaocheng Zhang,Xi Chen,Xingyu Chen,Weijing Shao,Gu Hong,Jianguang Xu,Ertao Hu,Lei Wang,Rongqing Xu,Yi Tong
出处
期刊:Nanomaterials
[MDPI AG]
日期:2021-10-27
卷期号:11 (11): 2860-2860
被引量:15
摘要
Artificial synapses and neurons are two critical, fundamental bricks for constructing hardware neural networks. Owing to its high-density integration, outstanding nonlinearity, and modulated plasticity, memristors have attracted emerging attention on emulating biological synapses and neurons. However, fabricating a low-power and robust memristor-based artificial neuron without extra electrical components is still a challenge for brain-inspired systems. In this work, we demonstrate a single two-dimensional (2D) MXene(V2C)-based threshold switching (TS) memristor to emulate a leaky integrate-and-fire (LIF) neuron without auxiliary circuits, originating from the Ag diffusion-based filamentary mechanism. Moreover, our V2C-based artificial neurons faithfully achieve multiple neural functions including leaky integration, threshold-driven fire, self-relaxation, and linear strength-modulated spike frequency characteristics. This work demonstrates that three-atom-type MXene (e.g., V2C) memristors may provide an efficient method to construct the hardware neuromorphic computing systems.
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