材料科学
钝化
钙钛矿(结构)
烷基
图层(电子)
光电子学
卤化物
载流子寿命
路易斯酸
光化学
化学工程
纳米技术
无机化学
硅
催化作用
有机化学
化学
工程类
作者
Ningning Ma,Jinchi Jiang,Guoxin Wang,Deyu Wang,Yiqi Zhang,Yufei Wang,Yaxi Wang,Yongcheng Ji,Wei Wei,Liang Shen
标识
DOI:10.1021/acsami.1c12826
摘要
Multifarious electron transport layers (ETLs), especially fullerene derivatives, have been applied in organic–inorganic hybrid perovskite (OIHP) devices owing to their superior optoelectronic properties. However, a PCBM Lewis acid molecule can only passivate the iodine-rich defect sites, which cannot solve the problem of uncoordinated Pb2+ and water oxygen erosion due to the high volatility of halide I– and the hydrophilicity of organic cation MA+. Herein, we introduce a Lewis base, TBA-Azo with an electron-donating Azo moiety, and hydrophobic long alkyl chains into the PCBM layer to form a multifunctional bulk-mixed electron transport layer (MBE). PCBM of MBE can combine with iodine-rich trap sites at the surface and grain boundaries of perovskite. TBA-Azo molecules of MBE can passivate uncoordinated Pb2+ by forming Lewis adducts and isolate water/oxygen at the perovskite surface with hydrophobic alkyl chains. It results in a decrease of trap densities with 1 order of magnitude, effectively inhibiting both bimolecular and trap-induced recombination and thus elongating the carrier lifetime. The passivation of MBE can effectively improve the open-circuit voltage from 1.05 to 1.10 V. Furthermore, three long carbon chain structures of TBA-Azo in MBE can improve the water-resistant ability of OIHP devices, which can maintain 90% of the original PCE after 500 h at the humidity of 50 ± 10%. We believe that the MBE with multifunctional defect passivation provides a strategy for simultaneously achieving high-performance and high-stability OIHP optoelectronic devices.
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