电容器
铁电性
材料科学
电导率
光电子学
X射线光电子能谱
非易失性存储器
电极
基质(水族馆)
兴奋剂
铁电电容器
分析化学(期刊)
电压
电气工程
化学
核磁共振
电介质
物理
海洋学
物理化学
色谱法
地质学
工程类
作者
Timofey V. Perevalov,Andrei A. Gismatulin,V. A. Gritsenko,Igor P. Prosvirin,Furqan Mehmood,Thomas Mikolajick,Uwe Schroeder
摘要
Lanthanum-doped HfZrO is considered as the ferroelectric material for capacitor structures used in one-transistor-one capacitor nonvolatile memory cells for the development of new generation nonvolatile random-access memory. Here, different capacitor structures are characterized by x-ray photoelectron spectroscopy electrically to determine the electron and hole contribution to the conductivity in these capacitor structures. Experiments related to the minority carrier's injection and charge transport from an n-Si and a p-Si substrate into a lanthanum-doped HfZrO layer show that the conductivity is bipolar. Electrons are injected into La:HfZrO from a negatively biased contact, and accordingly, holes are injected from a positive voltage biased electrode.
科研通智能强力驱动
Strongly Powered by AbleSci AI