材料科学
聚对苯二甲酸乙二醇酯
三元运算
制作
图层(电子)
聚酰亚胺
基质(水族馆)
形状记忆聚合物
纳米技术
活动层
配位聚合物
形状记忆合金
化学工程
聚合物
复合材料
计算机科学
病理
工程类
地质学
程序设计语言
替代医学
海洋学
薄膜晶体管
医学
作者
Wu‐Ji Sun,Yong‐Yan Zhao,Jin Zhou,Xue‐Feng Cheng,Jinghui He,Jianmei Lu
标识
DOI:10.1002/chem.201806420
摘要
Abstract Recently, resistance random access memories (RRAMs) have been studied extensively, because the demand for information storage is increasing. However, it remains challenging to obtain a flexible device because the active materials involved need to be nontoxic, nonpolluting, distortion‐tolerable, and biodegradable as well adhesive to diverse flexible substrates. In this paper, tannic acid (TA) and an iron ion (Fe III ) coordination complex were employed as the active layer in a sandwich‐like (Al/active layer/substrate) device to achieve memory performance. A nontoxic, biocompatible TA‐Fe III coordination complex was synthesized by a one‐step self‐assembly solution method. The retention time of the TA‐Fe III memory performance was up to 15 000 s, the yield up to 53 %. Furthermore, the TA‐Fe III coordination complex can form a high‐quality film and shows stable ternary memory behavior on various flexible substrates, such as polyethylene terephthalate (PET), polyimide (PI), printer paper, and leaf. The device can be degraded by immersing it in vinegar solution. Our work will broaden the application of organic coordination complexes in flexible memory devices with diverse substrates.
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