各向异性
材料科学
线性二色性
光探测
凝聚态物理
二色性
光学
光电子学
光电探测器
圆二色性
结晶学
物理
化学
作者
Shengxue Yang,Chunguang Hu,Minghui Wu,Wei‐Zheng Shen,Sefaattin Tongay,Kedi Wu,Bin Wei,Zhaoyang Sun,Chengbao Jiang,Li Huang,Zhongchang Wang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2018-08-02
卷期号:12 (8): 8798-8807
被引量:71
标识
DOI:10.1021/acsnano.8b05162
摘要
In-plane anisotropy of layered materials adds another dimension to their applications, opening up avenues in diverse angle-resolved devices. However, to fulfill a strong inherent in-plane anisotropy in layered materials still poses a significant challenge, as it often requires a low-symmetry nature of layered materials. Here, we report the fabrication of a member of layered semiconducting AIIIBVI compounds, TlSe, that possesses a low-symmetry tetragonal structure and investigate its anisotropic light–matter interactions. We first identify the in-plane Raman intensity anisotropy of thin-layer TlSe, offering unambiguous evidence that the anisotropy is sensitive to crystalline orientation. Further in-situ azimuth-dependent reflectance difference microscopy enables the direct evaluation of in-plane optical anisotropy of layered TlSe, and we demonstrate that the TlSe shows a linear dichroism under polarized absorption spectra arising from an in-plane anisotropic optical property. As a direct result of the linear dichroism, we successfully fabricate TlSe devices for polarization-sensitive photodetection. The discovery of layered TlSe with a strong in-plane anisotropy not only facilitates its applications in linear dichroic photodetection but opens up more possibilities for other functional device applications.
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