Semiconductor Crystal Growth under the Influence of Magnetic Fields

Abstract The recent development of semiconductor crystal growth focusses on increase of process efficiency and simultaneous improvement of crystal quality. For improved crystal quality, an exact and permanent control of the melt flow is a crucial parameter. To achieve larger crystals, the melt volume must be increased markedly resulting in disadvantageously changed melt convection. In the case of Czochralski growth, the flow can even become turbulent. This changed flow can disturb the single crystal growth and may give rise to dopant inhomogeneities within the crystal. To effectively influence melt flow and hence to improve growth conditions, magnetic fields can be applied. Mostly, steady magnetic fields (SMF) are applied in industrial scale to damp melt flow oscillations. However, compared to SMF the application of non‐SMF proves to be also very promising since significantly lower induction causes similar effects in the melt. An overview on magnetic field features with the focus on achievable results under the influence of traveling magnetic fields is given.