动态随机存取存储器
随机存取存储器
随机存取
计算机科学
半导体存储器
计算机网络
计算机硬件
作者
A. Spessot,Hyungrock Oh
标识
DOI:10.1109/ted.2020.2963911
摘要
This article reviews the status, the challenges, and the perspective of 1T-1C dynamic random access memory (DRAM) chip. The basic principles of the DRAM are presented, introducing the key functional aspects and the structure of modern devices. We present the most relevant historical trends for different modules of the memory chip, such as access device and storage element, reviewing some of the technological challenges faced by industry to guarantee the device shrinking imposed by the economic law. The most recent solutions introduced by the industry in modern DRAM devices for the critical elements are presented. Finally, a survey of the most critical bottleneck for future development is presented, reviewing some of the potential trends and perspectives of DRAM development.
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