退火(玻璃)
扫描电子显微镜
材料科学
薄膜
分析化学(期刊)
溅射沉积
氧气
氩
粒度
化学工程
溅射
冶金
纳米技术
复合材料
化学
色谱法
有机化学
工程类
作者
Putut Marwoto,Lana Khanifah,Sulhadi Sulhadi,Sugianto Sugianto,Budi Astuti,Edy Wibowo
出处
期刊:Journal of physics
[IOP Publishing]
日期:2019-10-01
卷期号:1321 (2): 022020-022020
被引量:2
标识
DOI:10.1088/1742-6596/1321/2/022020
摘要
Abstract The effect of annealing time on the morphology and oxygen content of ZnO:Ga films has been deeply studied. ZnO:Ga films were grown with the use of the dc Magnetron Sputtering on the corning glass substrate. The films are grown with a plasma power of 30 watt, Argon gas pressure of 500 mtorr, and a substrate temperature of 300 °C for an hour deposition. The effect of annealing time on the morphology of ZnO:Ga films was observed by using Scanning Electron Microscope (SEM), whereas the oxygen content of the film was determined by Energy Dispersive X-ray (EDX) spectrometers. The SEM images showed that the ZnO:Ga film grown with an annealing time of 40 minutes possess relatively more homogeneous and compact morphology with smoother grain size than the ZnO:Ga films that deposited with annealing times of 30 and 50 minutes. The EDX results confirmed that this film possess lowest oxygen content (24.5 % of mass) but highest Ga content (1.7 % of mass) comparated to the ZnO:Ga thin films grown with another annealing times.
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