平版印刷术
材料科学
光学
折射率
抵抗
波长
宽带
纵横比(航空)
光刻
补偿(心理学)
下一代光刻
电子束光刻
光电子学
复合材料
物理
心理学
图层(电子)
精神分析
标识
DOI:10.1016/j.snb.2005.02.006
摘要
This paper presents a study on UV-lithography of thick SU-8 resist using air gap compensation and optimal wavelength selection for ultra-high aspect ratio microstructures. Both numerical simulations and experiments were conducted to study effects of different lithography conditions: broadband light source with and without air gap compensation, filtered light source with glycerol liquid, and filtered light source with Cargille refractive index matching liquid. A thick PMMA sheet was used as an optical filter to eliminate most of the i-line components of a broadband light source. Using the filtered light source and gap compensation with the Cargille refractive index liquid perfectly matching that of SU-8, patterns with feature sizes of 6 μm thick, 1150 μm tall (aspect ratio of more than 190:1) and high quality sidewalls were obtained. Microstructures with height up to 2 mm and good sidewall quality were also obtained and presented. The study also proved that Cargille refractive index matching liquid is compatible with UV-lithography of SU-8 and may be used as an effective air gap compensation solution.
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